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Juan A. López Villanueva

 Research activities:
 
                                                                                                                                                         

 

 

 

 

·        Started on January, 1985, when I got a Fellowship from the Spanish Government

·        Developed at the University of Granada, mainly on Electron Devices

·        First stage: Set-Up of the first Laboratory for Electron Device Characterization at the University of Granada.

·        Ph. D. at the University if Granada: October, 1990

Ph.D. Dissertation: “Analysis of the Degradation of the Si-SiO2 System produced by Fowler-Nordheim tunneling injection”

Director: Juan E. Carceller Beltrán

·        Current Interest:     - Organic Electronics

- Power Electronics

 

 

Ph.D. dissertations (directed or co-directed):

 

·        Francisco J. Gámiz Pérez, "Study of the Electron Transport Properties in Semiconductor Inversion Layers by the Monte Carlo Method ", Granada, 1994

·        Jesús Banqueri Ozáez, "Experimental Study of the Electron Mobility in Metal-Oxide-Semiconductor Transistors", Granada, 1994

·        Juan B. Roldán Aranda, "Simulation by the Monte Carlo Method and Modelling of the Electron Transport in MOS Transistors with Short Channel", Granada, 1997

·        Ignacio Melchor Ferrer, "Study of Electron Systems in One-Dimensional Potentials. Application to the Metal-Insulator-Semiconductor Structure", Granada, 1997

·        Pedro Cartujo Cassinello, “Simulation and Modelling of Double-Gate MOS Transistors”, Granada, 2000

·        José Antonio Gázquez Parra, “System of Telecontrol via Radio for Autonomous Heliostate Plants”, Málaga, Septiembre, 2002

 

 

Developed Research Subjects:

 

1.      Degradation of the gate oxide and its interface with silicon by Fowler-Nordheim tunneling injection.

2.      Study of p-n junctions with deep impurities. Aplication to the generation-recombination noise.

3.      Self-consistent solution of the Poisson y Schrödinger equations in Metal-Insulator-Semiconductor structures, including non-parabolicity.

3.1.- For Electrons

3.2.- For Holes

4.      Experimental characterization and modeling of the electron mobility in MOSFETs, in the 13-300 K temperature range. Effects of the charge injection into the oxide.

5.      Simulation of the electron transport in quantized inversion layers by the Monte Carlo method.

5.1.- Calculation of the low-field mobility

5.2.- Electron transport including longitudinal field effects. Velocity overshoot

5.3.- Electron transport in strained Si on SiGe channels

5.4.- Electron transport in SiC MOSFETs

5.5.- Electron transport in very thin silicon layers in Silicon On Insulator (SOI) technology, of single and double gate

6.      Simulation of electron capture in impurities and defects in semiconductors and insulators by the Monte Carlo method.

7.      Study of the escape time through a potential barrier of electrons confined in a quantum well.

8.      Elastic and inelastic tunneling processes in the Si-SiO2 system.

9.      Modeling of the I-V characteristics of short channel transistors.

 

 

PUBLICATIONS (Only International Journals or Proceedings):

 

1.     Degradation of the gate oxide and its interface with silicon by Fowler-Nordheim tunneling injection.

 

·        J.A.López-Villanueva, J.A.Jiménez-Tejada, P.Cartujo, J.Bausells, J.E.Carceller. "Analysis of the effects of constant-current tunneling Fowler-Nordheim injection with charge-trapping inside the potential barrier", Journal of Applied Physics, 70 (7), 3712-3720 (1991)

·        J.A.López -Villanueva, J.A.Jiménez-Tejada, P.Cartujo, J.Bausells, J.E.Carceller. "A high-frequency bi-directional capacitance method to study the evolution of the interface state density generated at low temperatures". Solid-State Electronics, 35 (1), 73-81 (1992).

·        J.A. López-Villanueva, J.E. Carceller, F. Gámiz, J. Banqueri, "Electron trapping and detrapping in near-interfacial traps during Fowler-Nordheim tunneling injection at 77 K", Microelectronic Engineering 28; 317 - 320 (1995)

 

 

2.     Study of p-n junctions with deep impurities. Aplication to the generation-recombination noise.

 

·        J.A.López-Villanueva, J.A.Jiménez-Tejada, P.Cartujo, J.R.Morante, J.E.Carceller. "Analysis of a reverse-biased linearly graded junction with high concentration of deep impurities". Solid-State Electronics, 33 (7), 805-811 (1990)

·        J.A.Jiménez-Tejada, J.A.López-Villanueva, P.Cartujo, J.Vicente, J.E.Carceller. "Importance of the choice of the profile model for a p-n junction in the location of deep levels", Journal of Electronics Materials, 21 (9), 883-886 (1992)

·        J.A.Jiménez-Tejada, J.A.López-Villanueva, P.Cartujo, J.Vicente, J.E.Carceller. "Evolution of electrical magnitudes in gradual p-n junctions with deep levels during the emission of majority carriers", Journal of Applied Physics, 72 (10), 4946-4953 (1992)

·        J.A.Jiménez-Tejada, J.A.López-Villanueva, P.Cartujo, J.E.Carceller, "A non-destructive method to determine impurity profiles in non-abrupt p-n junctions with deep levels", Solid-State Electronics, 35(12), 1729-1736 (1992)

·        J.A.Jiménez Tejada, A. Godoy, A. Palma, y J.A.López Villanueva, “Generation-Recombination Noise in Highly-Asymmetrical p-n Junctions”, Journal of Applied Physics, vol. 92 (1), 320-329 (2002)

·        J.A. Jiménez Tejada, A. Godoy, J.E.Carceller, J.A.López Villanueva, "Effects of oxygen related defects on the electrical and thermal behavior of a n+/-p junction", Journal of Applied Physics, vol. 95(2), 561-70 (2004)

 

 

3.     Self-consistent solution of the Poisson y Schrödinger equations in Metal-Insulator-Semiconductor structures, including non-parabolicity.

 

3.1.- For Electrons:

           

·        J.A.López-Villanueva, I.Melchor, P.Cartujo, J.E.Carceller, "Modified Schrödinger equation including non-parabolicity for the study of a two-dimensional electron gas", Physical Review B, 48(3), 1626-1631 (1993)

·        J.A. López-Villanueva, F. Gámiz, I. Melchor, J.A. Jiménez-Tejada, "Density of states of a two dimensional electron gas including non-parabolicity", Journal of Applied Physics 75(8); 4267 - 4269 (1994)

·        J.A. López-Villanueva, I. Melchor, F. Gámiz, J. Banqueri, J.A.Jiménez-Tejada, "A model for the quantized accumulation layer in metal-insulator semiconductor structures", Solid State Electronics 38(1); 203 - 210 (1995)

·        J.A. López-Villanueva, P. Cartujo-Casinello, J.Banqueri, F. Gámiz, and S.Rodríguez, "Effects of the Inversion Layer Centroid on MOSFET Behavior", IEEE Transactions on Electron Devices 44(11); 1915 -1922 (1997)

·        P. Carpena, J.A.López-Villanueva, V.Gasparian, “Energy dependence of the effective mass in the envelope-function approximation”, Physica B, 253, 242-249 (1998)

·        J.A. López-Villanueva, P. Cartujo-Casinello, F. Gámiz, J.Banqueri, and A.Palma, "Effects of the Inversion-Layer Centroid on the Performance of Double-Gate MOSFET’s ", IEEE Transactions on Electron Devices, vol. 47(1), pp. 141-146 (2000)

 

3.2.- For Holes:

 

·        S.Rodríguez, J.A.López-Villanueva, I.Melchor, J.E.Carceller, “Hole Confinement and Energy Subbands in a Silicon Inversion Layer Using the Effective-Mass Theory”, Journal of Applied Physics, 86 (1), 438-444 (1999)

·        S.Rodríguez, J.A.López-Villanueva, P.Cartujo, and J.E.Carceller, “Semiempirical closed-form models for the inversion-layer centroid of a p-MOS including quantum effects”, Semiconductor Science and Technology, vol. 15, pp. 85-90 (2000)

 

 

4.     Experimental characterization and modeling of the electron mobility in MOSFETs, in the 13-300 K temperature range. Effects of the charge injection into the oxide.

 

·        J. Banqueri, F. Gámiz, J.E. Carceller, P. Cartujo, J.A. López-Villanueva, "Influence of the interface-state density on the electron mobility in silicon-inversion layers", Journal of Electronic Materials 22(9); 1159 - 1163 (1993)

·        J. Banqueri, J.A. López-Villanueva, F. Gámiz, J.E. Carceller, E. Lora-Tamayo, M. Lozano, "A procedure for the determination of the effective mobility in an N-MOSFET in the moderate inversion region", Solid State Electronics 39(6); 875 - 883 (1996)

·        J. Banqueri, J.A. López-Villanueva, F. Gámiz, A. Palma, J.E. Carceller, "Semi-Empirical Model Of Electron Mobility in MOSFETs in Strong Inversion Regime", IEE Proceedings - Circuits, Devices and Systems 143(4); 202 - 206 (1996)

·        J. Banqueri, J.A. López-Villanueva, P.Cartujo-Cassinello, S.Rodriguez and J.E.Carceller. "Experimental determination of the effective mobility in NMOSFETs: a comparative study". Solid-State Electronics. 43, 701-707 (1999)

 

 

5.     Simulation of the electron transport in quantized inversion layers by the Monte Carlo method.

 

5.1.- Calculation of the low-field mobility:

 

·        F. Gámiz, J. Banqueri, I. Melchor, J.E. Carceller, P. Cartujo, J.A. López-Villanueva, "An analytical expression for phonon-limited electron mobility in silicon inversion layers", J.Appl.Phys,74 (5), 3289-3292 (1993)

·        F. Gámiz, J.A. López-Villanueva, J. Banqueri, J.A. Jiménez-Tejada, P. Cartujo, "Accurate determination of silicon inversion layer mobility by the Monte Carlo method", en "Simulation of Semiconductor Devices and Processes, Vol 5", Editado por S.Selberherr. Springer-Verlag ISBN: 3-211-82504-5 ; 481-484 (1993)

·        F. Gámiz, J.A. López-Villanueva, J.A. Jiménez-Tejada, I.Melchor, A. Palma,  "A comprehensive model for Coulomb scattering in inversion layers", Journal of Applied Physics 75(2); 924 - 934 (1994)

·        F. Gámiz, I. Melchor, A. Palma, P. Cartujo, J.A. López-Villanueva, "Effects of oxide charge space correlation on electron mobility in inversion layers", Semiconductor Science and Technology 9; 1102-1107 (1994)

·        F. Gámiz, J. Banqueri, J.E. Carceller, J.A. López-Villanueva, "Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETS", Solid State Electronics 38(3); 611 - 614 (1995)

·        F. Gámiz, J.A. López-Villanueva, J. Banqueri, J.E. Carceller, P. Cartujo, "Universality of electron mobility curves in MOSFETs: A Monte Carlo study", IEEE Transactions on Electron Devices 42(2); 258 - 265 (1995)

·        F. Gámiz, J.A. López-Villanueva, "A comparison on models for phonon scattering in silicon inversion layers", Journal of Applied Physics 77(8); 4128 - 4129 (1995)

·        F. Gámiz, J.A. López-Villanueva, J. Banqueri, Y. Ghailan, J.E. Carceller, "Oxide charge space correlation in inversion layers II: Three dimensional oxide charge distribution", Semiconductor Science and Technology 10; 592 - 600 (1995)

·        F. Gámiz, J.A. López-Villanueva, J. Banqueri, J.E. Carceller, "Influence of the oxide-charge distribution profile on electron mobility in MOSFET's", IEEE Transactions on Electron Devices 42(5); 999 - 1004 (1995)

·        F. Gámiz, J.A. López-Villanueva, "Influence of negatively and positively charged scattering centers on electron mobility in semiconductor inversion layers. A Monte Carlo study", Journal of Applied Physics 78(3); 1787-1792 (1995)

·        F.Gámiz, J.A. López-Villanueva, J.B. Roldán, J.E. Carceller, "Influence of the Doping Profile on Electron Mobility in a MOSFET", IEEE Transactions on Electron Devices 43(11); 2023-2025 (1996)

 

5.2  Electron transport including longitudinal field effects. Velocity overshoot:

 

·        J.B. Roldán, F. Gámiz, J.A. López-Villanueva, J.E. Carceller, "Low-Temperature Modelling of Electron-Velocity-Overshoot Effects On 70-250 nm Gate-Length MOSFETs", Journal de Physique IV, Colloque 3 Vol 6; 13 - 18 (1996)

·        J.B. Roldán, F. Gámiz, J.A. López-Villanueva, J.E. Carceller,P. Cartujo, "The Dependence of the electron mobility on the longitudinal electric field in MOSFETs", Semiconductor Science and Technology 12; 321 - 330 (1997)

·        J.B. Roldán, F. Gámiz, J.A. López-Villanueva, J. E. Carceller, "Modeling Effects of Electron Velocity Overshoot in a MOSFET", IEEE Transactions on Electron Devices 44(5); 841-846 (1997)

·        J.B. Roldán, F. Gámiz, J.A. López-Villanueva, "A closed loop evaluation and validation of a method for determining the dependence of the electron mobility on the longitudinal-electric field in MOSFETs", IEEE Transactions on Electron Devices 44(9), 1447-1453 (1997)

·        J.A. López-Villanueva, F. Gámiz, J.B. Roldán, Y. Ghailan, J.E. Carceller, "Study of the effects of a stepped doping profile in short-channel MOSFETs", IEEE Transactions on Electron Devices 44(9); 1425 -1431 (1997)

·        A.Godoy, F.Gámiz, A.Palma, J.A.Jiménez-Tejada, J.Banqueri, and J.A.López-Villanueva, "Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide-semiconductor field-effect transistors", J.Appl.Phys. 82(9); 4621-4628 (1997)

·        J.B. Roldán, F. Gámiz, J.A. López Villanueva, J.E. Carceller, "Monte Carlo simulation of a submicron MOSFET including inversion layer quantization", VLSI Design 6 (1-4), 287-290 (1998)

·        J.B. Roldán, F. Gámiz, J.A. López-Villanueva, "Development of a method for determining the dependence of the electron mobility on the longitudinal-electric field in MOSFETs", VLSI Design, 8 (1-4), 261-264 (1998)

 

5.3 Electron transport in strained Si on SiGe channels:

 

·        F. Gámiz, J.B. Roldán, J.A. López-Villanueva, J.E. Carceller, P. Cartujo, "Strained Si/SiGe Heterostructures At Low Temperatures. A Monte Carlo Study", Journal de Physique IV, Colloque 3, Vol 6; 87-92 (1996)

·        F. Gámiz, J. Roldán, J.A. López-Villanueva, P. Cartujo, "Coulomb Scattering In Strained Silicon Inversion Layers on Si1-xGex Substrates"  Applied Physics Letters 69(6); 797 - 799 (1996)

·        J.B. Roldán, F. Gámiz, J.A. López Villanueva, J.E. Carceller, "A Monte Carlo Study On The Electron-Transport Properties Of High- Performance Strained-Si On Relaxed Si1-xGex  channel MOSFETs", Journal Of Applied Physics 80(9); 5121 - 5128 (1996)

·        F.Gámiz, J.A. López-Villanueva, J.B. Roldán, J.E. Carceller, and P.Cartujo,  "Electron velocity overshoot in strained Si/SiGe MOSFETs", en "Proceedings of the 26th European Solid State Device Research Conference", editado por G.Baccarani y M.Rudan, pp.411-414, Editions Frontieres, 1996.

·        J.B. Roldán, F. Gámiz, J.A. López Villanueva, J.E. Carceller, "Understanding the improved performance of strained Si/Si1-xGex channel MOSFETs", Semiconductor Science and Technology 12, 1603-1608 (1997)

·        J.B. Roldán, F. Gámiz, J.A. López Villanueva, J.E. Carceller, "An Analytical Model for the Electron Velocity Overshoot Effects in Strained-Si on SixGe1-x MOSFETs”, IEEE Transactions on Electron Devices, 45 (4), 993-995 (1998)

·        J.B. Roldán, F. Gámiz, J.A. López Villanueva, J.E. Carceller, "Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs”, J.Phys. IV, 8, Pr3-57-Pr3-60 (1998)

·        J.B. Roldán, F. Gámiz, J.A. López Villanueva, P. Cartujo, "Two-dimensional drift-diffusion simulator of superficial strained-Si/Si1-xGex channel metal-oxide-semiconductor field-effect transistors”, J.Vac.Sci.Technol. B 16(3), 1538-1540 (1998)

·        F. Gámiz, J.B. Roldán, J.A. López-Villanueva, "Monte Carlo simulation of non-local transport effects in strained Si on relaxed Si1-xGex heterostructures", VLSI Design, 8 (1-4), 253-256 (1998)

·        J.B. Roldán, F. Gámiz, J.A. López Villanueva, J.E. Carceller, and P.Cartujo, “A computational study of the strained-Si MOSFET: a possible alternative for the next century electronics industry”, Computer Physics Communications, vol 121-122, pp. 547-549 (1999)

·        F.Gámiz, J.B.Roldán, J.A.López-Villanueva, P.Cartujo, and A.Godoy, "Strained-Si on Si1-xGex MOSFET Inversion Layer Centroid Modeling", IEEE Transactions on Electron Devices, vol. 48(10), pp. 2447-2449 (2001)

 

5.4 Electron transport in SiC MOSFETs:

 

·        F. Gámiz, J. Roldán, J.A. López-Villanueva, J.E. Carceller, "Electron Velocity Saturation in Quantized Silicon Carbide Inversion Layers", Applied Physics Letters 69(15); 2219 - 2221 (1996)

·        J.B. Roldán, F. Gámiz, J.A. López-Villanueva, P. Cartujo, "Electron Transport Properties of Quantized Silicon Carbide Inversion Layers", Journal of Electronic Materials 26(3); 203 - 207 (1997)

·        F. Gámiz, J.B. Roldán, J.A. López-Villanueva, "A Monte Carlo Study on the electron mobility in quantized ß-SiC inversion layers", Journal of Applied Physics 81(10), 6857-6864 (1997)

·        J.B. Roldán, F. Gámiz, J.A. López-Villanueva, "A detailed simulation of silicon-carbide MOSFET performance and a comparison with their silicon counterparts", Semiconductor Science and Technology 12, 655-661 (1997)

·        J.B. Roldán, F. Gámiz, J.A. López Villanueva, P. Cartujo, "Electron mobility in quantized ß-SiC inversion layers”, J.Vac.Sci.Technol. B 16(3), 1631-1633 (1998)

·        F. Gámiz, J.B. Roldán, J.A. López-Villanueva, "A ß-SiC MOSFET Monte Carlo simulator including inversion layer quantization", VLSI Design, 8 (1-4), 257-260 (1998)          

 

5.5 Electron transport in very thin silicon layers in Silicon On Insulator (SOI) technology, of single and double gate:

 

·        F.Gámiz, J.B.Roldán, J.A. López-Villanueva, J.E. Carceller, "Monte Carlo Study on Electron Transport Properties in Double-Gate Fully Depleted SOI-MOSFETs", en "Proceedings of the 27th European Solid State Device Research Conference", editado por H.Grünbacher, pp.208-211, Editions Frontieres, 1997.

·        F.Gámiz, J.B.Roldán, J.A. López-Villanueva, J.E. Carceller, "Monte Carlo Simulation of Electron Mobility in Double-Gate SOI-MOSFETs", en “Proceedings of the Eighth International Symposium on Silicon-On-Insulator Technology and Devices”, editado por S. Cristoloveanu, pp.233-238, The Electrochemical Society Inc., 1997.

·        Gámiz, F., López-Villanueva, J.A.,  Roldán, J.B.,  Carceller, J.E., "Simulation of  the electron mobility in ultra-thin fully depleted single gate SOI MOSFETs",  en “Simulation of Semiconductor Processes and Devices, 1998”, editado por K. De Meyer y S. Biesemans, Ed. Springer-Verlag, 1998

·        F.Gámiz, J.B. Roldán, J.A. López Villanueva, "Phonon-limited electron mobility in ultrathin silicon-on-insulator inversion layers”, Journal of Applied Physics, 83 (9), 4802-4806 (1998)

·        F.Gámiz, J.A.López-Villanueva, J.B.Roldán, J.E.Carceller, P.Cartujo, “Monte Carlo Simulation of Electron Transport Properties in Extremely Thin SOI MOSFETs”, IEEE Transaction on Electron Devices, 45 (5), 1122-1126 (1998)

·        F.Gámiz, J.B.Roldán, P.Cartujo-Cassinello, J.E.Carceller, J.A.López-Villanueva, and S.Rodríguez, “Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers”, J.Appl.Phys., vol.86 (11), pp. 6269-6275 (1999)

·        F.Gámiz, J.B.Roldán, J.A.López-Villanueva, P.Cartujo-Cassinello, and J.E.Carceller, “Surface Roughness at the Si-SiO2 interfaces in fully depleted silicon-on-insulator inversion layers”, J.Appl.Phys., vol.86 (12), pp. 6854-6863 (1999)

·        F.Gámiz, J.B.Roldán, P.Cartujo-Cassinello, J.A.López-Villanueva, and P.Cartujo, “Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers”, J.Appl.Phys., vol.89 (3), pp.1764-1770 (2001)

·        F.Gámiz, J.B.Roldán, J.A.López-Villanueva, P.Cartujo-Cassinello, J.E.Carceller, P.Cartujo, and F.Jiménez-Molinos, “Electron transport in silicon-on-insulator devices”, Solid-State Electronics,  vol. 45 (4), pp. 613-620 (2001)

·        F.Gámiz, J.B.Roldán, J.A.López-Villanueva, F.Jiménez-Molinos and J.E.Carceller,  “Electron transport in ultrathin double-gate SOI devices”, Microelectronic Engineering, vol. 59 (1-4), pp. 423-427 (2001)

·        F.Gámiz, J.B.Roldán, J.A.López-Villanueva, P.Cartujo-Cassinello, J.E.Carceller and P.Cartujo, "Monte Carlo Simulation of Electron Transport in Silicon-On-Insulator Devices” en “Silicon on Insulator. Technology and Devices X”, editado por S. Cristoloveanu, pp.157-168. The Electrochemical Society Inc., 2001.

·        F.Gámiz, J.B.Roldán, J.A.López-Villanueva, P.Cartujo-Cassinello and F.Jiménez-Molinos,  “Monte Carlo simulation of electron mobility in silicon-on-insulator structures”, Solid State Electronics, vol. 46 (11), pp. 1715-1721 (2002)

 

 

6. Simulation of electron capture in impurities and defects in semiconductors and insulators by the Monte Carlo method.

 

·        A. Palma, J.A. Jiménez-Tejada, A. Godoy, J.A. López-Villanueva, J.E. Carceller, "Monte Carlo study of the statistics of electron capture by shallow donors in silicon at low temperatures", Physical Review B 51(20); 14147-14151 (1995)

·        A. Palma, J.A. Jiménez-Tejada, I. Melchor, J.A. López-Villanueva, J.E. Carceller, "Comprehensive Monte Carlo simulation of the non radiative carrier capture process by impuririties in semiconductors", Journal of Applied Physics 77(5); 1998 - 2005 (1995)

·        A. Palma, J.A. López-Villanueva, J.E. Carceller, "Electric-Field Dependence Of The Electron Capture Cross-Section of Neutral Traps in SiO2", Journal Of The Electrochemical Society 143(8); 2687 - 2690 (1996)

·        A. Palma, J.A. López-Villanueva, J.E. Carceller, "Electric-Field Dependence of the Electron Capture Cross-Section of Neutral Traps in SiO2 Bulk", en "The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3", editado por H.Z.Massoud, E.H.Poindexter, and C.R.Helms., The Electrochemical Society Inc., 1996.

 

 

7.  Study of the escape time through a potential barrier of electrons confined in a quantum well.

 

·        J.A.López-Villanueva, V.Gasparian, “Local Larmor clock approach to the escape time”, Phys.Lett.A, 260, 286-293 (1999)

·        V.Gasparian, J.A.López-Villanueva, “The Escape Time of Electrons from Localized States”, Physica Status Solidi B-Basic Research, vol.218 (1), pp. 299-302 (2000)

 

 

8.  Elastic and inelastic tunneling processes in the Si-SiO2 system.

 

·        A.Palma, A.Godoy, J.A.Jiménez-Tejada, J.E.Carceller, and J.A.López-Villanueva, "Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures", Phys.Rev.B, 56 (15), 9565-9574 (1997)

·        F.Jiménez-Molinos, A.Palma, F.Gámiz, J.Banqueri, and J.A.López-Villanueva, "Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures", Journal of Applied Physics, vol. 90 (7), 3396-3404 (2001)

·        F.Jiménez-Molinos, F.Gámiz, A.Palma, P.Cartujo, and J.A.López-Villanueva, “Direct and trap-assisted elastic tunneling through ultrathin gate oxides”, Journal of Applied Physics, vol. 91 (8), 5116-5124 (2002)

 

 

9.  Modeling of the I-V characteristics of short channel transistors.

 

·        J.B. Roldán, F. Gámiz, J.A. López Villanueva, J.E. Carceller, "I-V and small signal parameters modelling of ultrasubmicron MOSFETs including the significant electron-velocity overshoot effects, which are enhanced at low temperature”, J.Phys. IV, 8, Pr3-21-Pr3-24 (1998)

·        J.B. Roldán, F. Gámiz, J.A. López Villanueva, J.E. Carceller, "A Model for the Drain Current of Deep Submicrometer MOSFETs Including Velocity Overshoot”, IEEE Transactions on Electron Devices, 45 (10), 2249-2251 (1998)

·        J.B.Roldán, F.Gámiz, J.A.López-Villanueva, P.Cartujo-Cassinello, “Deep-Submicrometer SOI MOSFET Drain Current Model Including Series Resistance, Self-Heating and Velocity Overshoot Effects”, Electron Dev.Lett., vol.21 (5), pp 239-241 (2000)

·        A.Godoy, J.A.López-Villanueva, J.A.Jiménez-Tejada, A.Palma, F.Gámiz, “A simple subthreshold swing model for short channel MOSFETs”, Solid-State Electronics, vol. 45 (3), pp. 391-397 (2001)